sot323 pnp silicon planar high performance transistor draft specification issue a ? october 94 features * extremely low saturation voltage * 500mw power dissipation * 1 amp continuous collector current (i c ) applications * ideally suited for space / weight critical applications absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5 v peak pulse current i cm -2 a continuous collector current i c -1 a base current i b -200 ma power dissipation at t amb =25c p tot 500 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -80 v i c =-100 a, i e =-0 collector-emitter breakdown voltage v ceo(sus) -60 v i c =-10ma*, i b =-0 emitter-base breakdown voltage v (br)ebo -5 v i e =-100 a, i c =-0 collector cut-off current i cbo -100 na v cb =-60v collector cut-off current i ces -100 na vce=-60v emitter cut-off current i ebo -100 na v eb =-4v, i c =-0 collector-emitter saturation voltage v ce(sat) -0.3 -0.6 v v i c =-500ma, i b =-50ma* i c =-1a, i b =-100ma* base-emitter saturation voltage v be(sat) -1.2 v i c =-1a, i b =-100ma* base-emitter turn on voltage v be(on) -1.0 v ic=-1a, v ce =-5v* * measured under pulsed conditions. pulse width=300 s. duty cycle ? 2% sot323 ZUMT591 c b e electrical characteristics (at t amb = 25c). parameter symbol min. typ. max. unit conditions. static forward current transfer ratio h fe 100 100 80 15 300 i c =-1ma, v ce =-5v* i c =-500ma, v ce =-5v* i c =-1a, v ce =-5v* i c =-2a, v ce =-5v* transition frequency f t 150 mhz i c =-50ma, v ce =-10v* f=100mhz ouput capacitance c obo 10 pf v cb =-10v, f=1mhz * measured under pulsed conditions. pulse width=300 s. duty cycle ? 2% note this data is derived from development material and does not necessarily mean that the device will go into production ZUMT591 europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park chadderton, oldham, ol9 9ll united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex semiconductors plc 2005 semiconductors
sot323 pnp silicon planar high performance transistor draft specification issue a ? october 94 features * extremely low saturation voltage * 500mw power dissipation * 1 amp continuous collector current (i c ) applications * ideally suited for space / weight critical applications absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5 v peak pulse current i cm -2 a continuous collector current i c -1 a base current i b -200 ma power dissipation at t amb =25c p tot 500 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -80 v i c =-100 a, i e =-0 collector-emitter breakdown voltage v ceo(sus) -60 v i c =-10ma*, i b =-0 emitter-base breakdown voltage v (br)ebo -5 v i e =-100 a, i c =-0 collector cut-off current i cbo -100 na v cb =-60v collector cut-off current i ces -100 na vce=-60v emitter cut-off current i ebo -100 na v eb =-4v, i c =-0 collector-emitter saturation voltage v ce(sat) -0.3 -0.6 v v i c =-500ma, i b =-50ma* i c =-1a, i b =-100ma* base-emitter saturation voltage v be(sat) -1.2 v i c =-1a, i b =-100ma* base-emitter turn on voltage v be(on) -1.0 v ic=-1a, v ce =-5v* * measured under pulsed conditions. pulse width=300 s. duty cycle ? 2% sot323 ZUMT591 c b e electrical characteristics (at t amb = 25c). parameter symbol min. typ. max. unit conditions. static forward current transfer ratio h fe 100 100 80 15 300 i c =-1ma, v ce =-5v* i c =-500ma, v ce =-5v* i c =-1a, v ce =-5v* i c =-2a, v ce =-5v* transition frequency f t 150 mhz i c =-50ma, v ce =-10v* f=100mhz ouput capacitance c obo 10 pf v cb =-10v, f=1mhz * measured under pulsed conditions. pulse width=300 s. duty cycle ? 2% note this data is derived from development material and does not necessarily mean that the device will go into production ZUMT591 europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park chadderton, oldham, ol9 9ll united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex semiconductors plc 2005 semiconductors
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